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Abstract Correlating data from optical, structural, and theoretical methods allows the properties of highly faceted Cd₂SnO₄(CTO) inverted spinel plasmonic semiconductor nanocrystals (PSNCs) to be fully evaluated. The use of Sn(II) in the colloidal reaction for CTO results in reproducible octahedral PSNCs with an aspect ratio of 1.30. Correlating extinction spectra with magnetic circular dichroism yields a carrier density (n = 5.19 × 10¹⁹ cm⁻³) and carrier effective mass (m* = 0.022m_e) respectively.¹¹³Cd and¹¹⁹Sn solid‐state NMR experiments show clear evidence of metallic‐like carriers in CTO NCs based upon the observation of Knight shifts. These data suggest that carrier formation in CTO arises from Sn antisite occupation of octahedral Cd sites (Sn_Cd)_.From a broader perspective, the results point to wide‐bandgap spinels as being an important but understudied class of plasmonic PSNCs. 

Abstract As a 1.8 nm ZnSe nanocrystal is progressively doped with 1%, 5%, and 10% Fe, it shows a progressive change in its magnetic properties from a superparamagnetic FM‐dominated exchange type to an onset of AFM exchange with evidence of spin frustration. Magnetization measurements allow to obtain exchange coupling constants that are compared to the results of a Broken‐Symmetry Density Functional Theory (BS‐DFT) model of a doped (ZnSe)₃₄cluster. DFT shows a capability to reproduce the experimental pattern of the increasing influence of AFM exchange as doping concentration increases. The material phase segregates at the edges where strained rhombic surface sites are the preferred doping sites of iron. Large concentrations of iron leads to the formation of Fe clusters and complex exchange patterns that result in spin frustration in some iron trimers but none in the others. The spin frustration of these complex systems by assuming mirror symmetry of the sites when fitting by using BS‐DFT formalism is classified and analyzed. While some individual J constants obtained have significant errors, the averaged exchange constants are generally in good agreement with our experimental data. 

Abstract Triplet–triplet annihilation‐based photon upconversion (TTA‐UC) can efficiently generate higher energy photons at low relative fluences. Bulk metal halide perovskites have offered promise in efficiently sensitizing molecular triplet states in the solid state, necessary for the integration of TTA‐UC into device‐based applications. Recent work focused on TTA‐UC from a rubrene triplet annihilator sensitized by perovskite thin films has established relatively efficient charge extraction from the perovskite, forming the triplet exciton in rubrene. Yet, the specifics underpinning charge transfer at the perovskite/rubrene interface are not fully elucidated. To improve device performance and study the properties governing charge transfer at the interface, various organic solvents are explored to treat the perovskite surface. Scanning tunneling microscopy and spectroscopy show a difference in the electronic band structure, where both n‐ and p‐type terminated perovskite surfaces are observed depending on the solvent used. Supported by optical spectroscopy, the impact of the perovskite electronic structure is monitored, indicating that n‐type perovskite sensitizers feature higher TTA‐UC efficiencies due to favorable band bending resulting in efficient hole‐mediated triplet formation. Overall, the tuning of the electronic structure of the perovskite sensitizer through solvent treatment is shown to be a key force in tuning the mechanism of efficient triplet generation.